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Conferences > UP > 1992 > TUC > TUC11

Evidence of slow hole spin relaxation in n-modulation doped GaAs/AlGaAs quantum well structures

P. Rolland, R. Ferreira, Ph. Roussignol, C. Delalande, A. Vinattieri, J. Martinez-Pastor, L. Carraresi, M. Colocci, J.F. Palmier, and B. Etienne

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Abstract

Almost instantaneous hole spin relaxation has been often assumed in semiconductor structures [1]. On the other hand, theoretical models predict a slowing down of the hole spin relaxation time in GaAs/AlGaAs quantum wells due to the size quantization along the growth axis [2].

© 1992 The Author(s)

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