Ultrafast dephasing dynamics and multi-level electronic structure of InP nanocrystals

G. Cerullo; U. Banin; A. A. Guzelian; C. J. Bardeen; C. J. Bardeen; R. W. Schoenlein; A. P. Alivisatos; A. P. Alivisatos; C. V. Shank; C. V. Shank

doi:10.1364/UP.1996.ThB.5

Ultrafast Phenomena
Technical Digest Series (Optica Publishing Group, 1996),
paper ThB.5
•https://doi.org/10.1364/UP.1996.ThB.5

Ultrafast dephasing dynamics and multi-level electronic structure of InP nanocrystals

G. Cerullo, U. Banin, A. A. Guzelian, C. J. Bardeen, R. W. Schoenlein, A. P. Alivisatos, and C. V. Shank

International Conference on Ultrafast Phenomena 1996

San Diego, California United States
28 May–1 June 1996
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Microcavities and Dots (ThB)

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G. Cerullo, U. Banin, A. A. Guzelian, C. J. Bardeen, R. W. Schoenlein, A. P. Alivisatos, and C. V. Shank, "Ultrafast dephasing dynamics and multi-level electronic structure of InP nanocrystals," in Ultrafast Phenomena, Technical Digest Series (Optica Publishing Group, 1996), paper ThB.5.

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Abstract

Semiconductor nanocrystals are a novel class of materials intermediate between the molecular and solid state forms of matter. Their homogenous linewidths and electronic structure are of considerable interest for the understanding of the physics of quantum confinement. In this work we study the electronic and vibrational dephasing dynamics in InP nanocrystals using femtosecond three pulse photon echo (3PPE) experiments¹ complemented by nanosecond transient hole-burning (HB) spectroscopy.² The echo decay is explained by taking into account the multi-level electronic structure as observed in the hole-burning experiment.

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