Abstract

Thin films of several refractory metal oxides and Ge were deposited by pulsed laser evaporation using a TEA CO₂ laser. Films deposited on ambient temperature substrates had a polycrystalline microstructure. Ge films deposited on 300°C substrates were single crystalline. The refractive indices of these films were higher than indices of films deposited by conventional evaporation techniques and were bulk values for HfO₂ and ZrO₂. The crystalline microstructure and high packing density of the films were attributed to the effect of energetic ions in the laser-induced plasma.

© 1989 Optical Society of America

Properties of thin PbF₂ films deposited by cw and pulsed laser assisted evaporation

Haluk Sankur
Appl. Opt. 25(12) 1962-1965 (1986)

Thin-film deposition by laser-assisted evaporation

H. Sankur and R. Hall
Appl. Opt. 24(20) 3343-3347 (1985)

Ion assisted deposition of thermally evaporated Ag and Al films

Chang Kwon Hwangbo, Linda J. Lingg, John P. Lehan, H. Angus Macleod, John L. Makous, and Sang Yeol Kim
Appl. Opt. 28(14) 2769-2778 (1989)

Investigation of the evaporation process conditions on the optical constants of zirconia films

J. A. Dobrowolski, P. D. Grant, R. Simpson, and A. J. Waldorf
Appl. Opt. 28(18) 3997-4005 (1989)

Effects of low substrate temperature and ion assisted deposition on composition, optical properties, and stress of ZnS thin films

Judith A. Ruffner, Marc D. Himel, Victor Mizrahi, George I. Stegeman, and Ursula J. Gibson
Appl. Opt. 28(24) 5209-5214 (1989)