Abstract

A Ge metal–semiconductor–metal photodetector covered with asymmetric ${{\rm{HfSe}}_2}$ contact geometries has been proposed to realize high-performance unbiased photodetection at 1550 nm. At -1 V bias, the responsivity of this device shows a 71% improvement compared to the device without ${{\rm{HfSe}}_2}$. Moreover, the responsivity and detectivity of this device at zero bias can reach to 71.2 mA/W and ${3.27} \times {{10}^{10}}$ Jones, respectively. Furthermore, the fall time of this device is 2.2 µs and 53% shorter than the device without ${{\rm{HfSe}}_2}$. This work provides a feasible way to develop unbiased Ge-based photodetectors in the near-IR communications band.

© 2022 Optica Publishing Group

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