Mg ion implantation and post-annealing effect on the photoelectrical performance of a β-Ga<sub>2</sub>O<sub>3</sub> photodetector

Zhenghua Wang; Lei Yuan; Yingmin Wang; Jian Wang; Yuming Zhang; Renxu Jia

doi:10.1364/AO.485308

Applied Optics
Vol. 62,
Issue 15,
pp. 3848-3854
(2023)
•https://doi.org/10.1364/AO.485308

Mg ion implantation and post-annealing effect on the photoelectrical performance of a β-Ga₂O₃ photodetector

Zhenghua Wang, Lei Yuan, Yingmin Wang, Jian Wang, Yuming Zhang, and Renxu Jia

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
Zhenghua Wang, Lei Yuan, Yingmin Wang, Jian Wang, Yuming Zhang, and Renxu Jia, "Mg ion implantation and post-annealing effect on the photoelectrical performance of a β-Ga₂O₃ photodetector," Appl. Opt. 62, 3848-3854 (2023)

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Check for updates

Abstract

The effects of magnesium ion implantation and post-annealing on the photoelectric performance of a $\beta {\text -} {{\rm Ga}_2}{{\rm O}_3}$-based vertical structural Schottky photodetector (PD) were thoroughly investigated. After implantation and post-annealing, the Schottky barrier height and bandgap of the ${{\rm Ga}_2}{{\rm O}_3}$ surface can be slightly increased, while the dark current is significantly reduced, and the light-to-dark current ratio is immensely improved. The PD exhibited a photo-to-dark current ratio of 1733, responsivity of 5.04 mA/W, and specific detectivity of ${3.979} \times {{10}^{11}}$ Jones under ${-}{2.6}\;{\rm V}$ bias, and the rise and decay times are 0.157 were 0.048 s, respectively. The large left shift of the open-circuit voltage is feasibly explained by applying the thermionic-emission diffusion theory.

Full Article | PDF Article

More Like This

High-performance layer-structured Si/Ga₂O₃/CH₃NH₃PbI₃ heterojunction photodetector based on a Ga₂O₃ buffer interlayer

Guibao Wang, Tiqiang Pang, Kai Sun, Suzhen Luan, Yuming Zhang, Lei Yuan, and Renxu Jia
Appl. Opt. 62(6) A76-A82 (2023)

Influence of annealing atmosphere on the performance of a β-Ga₂O₃ thin film and photodetector

Zhaoqing Feng, Lu Huang, Qian Feng, Xiang Li, Hui Zhang, Weihua Tang, Jincheng Zhang, and Yue Hao
Opt. Mater. Express 8(8) 2229-2237 (2018)

Development of solar-blind photodetectors based on Si-implanted β-Ga₂O₃

Sooyeoun Oh, Younghun Jung, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, and Jihyun Kim
Opt. Express 23(22) 28300-28305 (2015)

Previous Article Next Article

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Figures (10)

You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Tables (2)

You do not have subscription access to this journal. Article tables are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Equations (4)

You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

	Bias Voltage	$I_{d a r k}$ (A)	$I_{p h o t o}$ (A)	R (mA/W)	$D^{*}$ (Jones)	EQE (%)	Rejection Ratio
${G a}_{2} O_{3}$ -Undoped	0.1 V	$1.18 \times 10^{- 13}$	$1.32 \times 10^{- 11}$	1.41	$5.323 \times 10^{10}$	0.687	112
${G a}_{2} O_{3} - M g$	−2.7 V	$6.64 \times 10^{- 14}$	$4.98 \times 10^{- 11}$	5.35	$2.705 \times 10^{11}$	2.61	755
${G a}_{2} {O_{3} - M}_{g} - N_{2}$	−2.6 V	$2.7 \times 10^{- 14}$	$4.68 \times 10^{- 11}$	5.04	$3.979 \times 10^{11}$	2.46	1733

	$τ_{r 1}$ (s)	$τ_{r 2}$ (s)	$τ_{d 1}$ (s)	$τ_{d 2}$ (s)
${G a}_{2} O_{3}$ -Undoped	0.104	2.247	0.017	0.017
${G a}_{2} O_{3} - M g$	0.131	2.329	0.005	0.016
${G a}_{2} {O_{3} - M}_{g} - N_{2}$	0.157	0.157	0.048	0.048

	Bias Voltage	$I_{d a r k}$ (A)	$I_{p h o t o}$ (A)	R (mA/W)	$D^{*}$ (Jones)	EQE (%)	Rejection Ratio
${G a}_{2} O_{3}$ -Undoped	0.1 V	$1.18 \times 10^{- 13}$	$1.32 \times 10^{- 11}$	1.41	$5.323 \times 10^{10}$	0.687	112
${G a}_{2} O_{3} - M g$	−2.7 V	$6.64 \times 10^{- 14}$	$4.98 \times 10^{- 11}$	5.35	$2.705 \times 10^{11}$	2.61	755
${G a}_{2} {O_{3} - M}_{g} - N_{2}$	−2.6 V	$2.7 \times 10^{- 14}$	$4.68 \times 10^{- 11}$	5.04	$3.979 \times 10^{11}$	2.46	1733

	$τ_{r 1}$ (s)	$τ_{r 2}$ (s)	$τ_{d 1}$ (s)	$τ_{d 2}$ (s)
${G a}_{2} O_{3}$ -Undoped	0.104	2.247	0.017	0.017
${G a}_{2} O_{3} - M g$	0.131	2.329	0.005	0.016
${G a}_{2} {O_{3} - M}_{g} - N_{2}$	0.157	0.157	0.048	0.048

Abstract

Data availability

Cited By

Figures (10)

Tables (2)

Equations (4)

Applied Optics