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Abstract
Lead halide perovskites (LHPs) have been extensively studied due to their remarkable optoelectronic performance. However, the toxicity of a lead ion to humans and its instability under ambient conditions render lead-based halide perovskite an unsuitable material for commercialization. Meanwhile, lead-free halide perovskite (LFHP) devices generally exhibit poor performance. Therefore, enhancing photoelectric conversion capacity is the most important issue that needs to be addressed. Here, we propose a photodetector (PD) fabricated using ${{\rm CsBi}_3}{{\rm I}_{10}}/{\rm phenyl} {\text -} {{\rm C}_{61}}$-butyric acid methyl ester (PCBM) bulk heterojunction as the active layer. The PD illuminated under 532 nm can reach a high responsivity (1.54 A/W) at ${-}{2}\;{\rm V}$ bias, while at 2 V bias, the PD reaches a higher responsivity (224.40 A/W). All of those results suggest that ${{\rm CsBi}_3}{{\rm I}_{10}}/ {\rm PCBM}$ bulk heterojunctions hold enormous potential in substituting for LHPs in optoelectronic devices.
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