Abstract
Surface photovoltage spectroscopy equations for cathode materials with an AlxGa1?xAs
buffer layer are determined in order to effectively measure the body parameters for
transmission-mode (t-mode) photocathode materials before Cs-O activation. Body parameters of cathode
materials are well fitted through experiments and fitting calculations for the designed
AlxGa1?xAs/GaAs structure material. This investigation examines photo-excited performance and
measurements of body parameters for t-mode cathode materials of different doping structures. It also
helps study various doping structures and optimize structure designs in the future.
© 2012 Chinese Optics Letters
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