Abstract

In this Letter, we report large-area (600 μm diameter) 4H-SiC avalanche photodiodes (APDs) with high gain and low dark current for visible-blind ultraviolet detection. Based on the separate absorption and multiplication structure, 4H-SiC APDs passivated with SiN _x instead of SiO₂ are demonstrated for the first time, to the best of our knowledge. Benefitting from the SiN_x passivation, the surface leakage current is effectively suppressed. At room temperature, high multiplication gain of 6.5×10⁵ and low dark current density of 0.88 μA/cm² at the gain of 1000 are achieved for our devices, which are comparable to the previously reported small-area SiC APDs.

© 2018 Chinese Laser Press

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