Abstract

Sb-doped β-Ga₂O₃ crystals were grown using the optical floating zone (OFZ) method. X-ray diffraction data and X-ray rocking curves were obtained, and the results revealed that the Sb-doped single crystals were of high quality. Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice. The carrier concentration of the Sb-doped single crystals increased from 9.55×10¹⁶ to 8.10×10¹⁸ cm⁻³, the electronic mobility depicted a decreasing trend from 153.1 to 108.7 cm² ·V⁻¹ ·s⁻¹, and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration. The un-doped and Sb-doped β-Ga₂O₃ crystals exhibited good light transmittance in the visible region; however, the evident decrease in the infrared region was caused by increase in the carrier concentration. The Sb-doped β-Ga₂O₃ single crystals had high transmittance in the UV region as well, and the cutoff edge appeared at 258 nm.

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