Abstract

Ga₂O₃-based avalanche photodetectors (APDs) have gained increasing attention because of their excellent photoelectric conversion capability in the UV solar-blind region. Integrating high-quality epitaxial Ga₂O₃ with p-type semiconductor remains an open challenge associated with the integration difficulty on alleviating its defects and dislocations. Herein, we construct an APD consisting of epitaxial β-Ga₂O₃/La_0.8Ca_0.2MnO₃ heterostructure. The pn junction APDs exhibit a high responsivity of 568 A/W as well as an enhanced avalanche gain of up to 3.0×10⁵ at a reverse bias voltage of 37.9 V. The integration capability demonstrated in this work provides exciting opportunities for further development of high-performance Ga₂O₃-based electronics and optoelectronics.

© 2023 Chinese Laser Press

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