Abstract

Here, we present a study of the effective piezoelectric constant (e_14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within a semiconductor optical amplifier (SOA). We determined e_14e using a method that was insensitive to the segregation phenomenon and to the temperature dependence of the bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energy and out-of-plane effective masses of electrons and heavy holes. An e_14e=−0.0534±0.0040 C · m⁻² at 23°C was obtained for an SOA with 1.2 nm [111]-oriented strained In_0.687Ga_0.313As/In_0.807Ga_0.193As_0.304P_0.696 QWs. Unlike previously published research, where e_14e magnitude increased as temperature rised, we extracted an e_14e magnitude that decreased as temperature increased.

© 2023 Chinese Laser Press

Temperature dependence of multiphonon absorption in zinc selenide

Perry A. Miles
Appl. Opt. 16(11) 2891-2896 (1977)

Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

Yan Zhang, Yongqiang Ning, Lisen Zhang, Jinsheng Zhang, Jianwei Zhang, Zhenfu Wang, Jian Zhang, Yugang Zeng, and Lijun Wang
Opt. Express 19(13) 12569-12581 (2011)

Nondegenerate two-photon absorption in zinc blende semiconductors

D. C. Hutchings and E. W. Van Stryland
J. Opt. Soc. Am. B 9(11) 2065-2074 (1992)

Dispersion and anisotropy of optical rectification in zinc blende quantum wells

Jacob B. Khurgin
J. Opt. Soc. Am. B 13(10) 2129-2140 (1996)

Temperature dependence of the hydrogen-diffusion constant in optical fibers

Y. Namihira, K. Mochizuki, and M. Kuwazuru
Opt. Lett. 9(9) 426-428 (1984)