Abstract
AlGaN-based light-emitting diodes (LEDs) on offcut substrates enhance radiative emission via forming carrier localization centers in multiple quantum wells (MQWs). This study introduces the carrier transport barrier concept, accessing its impact on the quantum efficiency of LEDs grown on different offcut sapphire substrates. A significantly enhanced internal quantum efficiency (IQE) of 83.1% is obtained from MQWs on the 1° offcut sapphire, almost twice that of the controlled 0.2° offcut sample. Yet, 1° offcut LEDs have higher turn-on voltage and weaker electroluminescence than 0.2° ones. Theoretical calculations demonstrate the existence of a potential barrier on the current path around the step-induced Ga-rich stripes. Ga-rich stripes reduce the turn-on voltage but restrict sufficient driving current, impacting LED performance.
© 2024 Chinese Laser Press
PDF Article
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription