Abstract

It is known that PN-type photodiodes possess high optoelectronic chromatic dispersion (OED). Here we present a theoretical and experimental study of OED in PIN-type photodiodes. Applying the modulation phase-shift technique, a Ge PIN photodiode exhibits ∼0.5 deg/nm phase-shift sensitivity at 10 MHz modulation, corresponding to a dispersion of $\textrm{1}\mathrm{.4\ \times 1}{\textrm{0}^\textrm{9}}\,\textrm{ps/}({\mathrm{nm\ \times km}} )$, many orders of magnitude larger than high-dispersion optical materials such as chalcogenide glass. A striking feature of the PIN device is the ability to tune the amount and sign of the OED through the bias voltage. Electronic tuning between −0.8 deg/nm and +0.5 deg/nm is shown. The PIN photodiode is an on-chip device possessing significant tunable dispersion for applications in optical sensing and spectroscopy.

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