Abstract
Recently, optical data processing systems have required high power and short wavelength laser diodes with single lobed, far field patterns. The nonabsorbing mirror (NAM) structure1 will be an indispensable part of GaAlAs lasers for a reliable high power operation of more than 50 mW. A Zn- diffused window stripe laser2 with a NAM and weak index guiding is a simple structure suitable for these systems.
© 1989 Optical Society of America
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