Abstract
All-epitaxial vertical cavity surface emitting lasers have many advantages over those requiring ex-situ reflector deposition. The drawback of the all-epitaxial design is that current flow must be through a p-doped semiconductor multilayer stack. Due to interfacial barriers in the valence hand of such a structure, voltage is dropped across it, which gives a sizable heating effect.
© 1991 Optical Society of America
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