Abstract
Two modes of degradation in semiconductor lasers have been reported.1 One is a rapid degradation due to dark line defects (DLDs) and the other is gradual degradation characterized by a gradual uniform darkening in the carrier-injected active layer. The dark line defects are supposed to be caused by dislocation networ, however, the physical mechanism of gradual degradation is not yet fully understood. Many microdislocation loops,2 an increase in holetrap concentration,3 and a change in the number and energy level of electron traps4 may take charge of the gradual degradation.
© 1994 Optical Society of America
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