Abstract
Dynamic behaviour of semiconductor lasers can be strongly influenced by carrier heating.1–9 Usually stimulated emission and free-carrier absorption are considered as main sources of heating.1·4·5 However recent investigations6·7 have shown that very important source of heating is carrier injection process, and under sufficiently large band-gap offset the modulation bandwidth can increase considerably.6 Moreover the inclusion of hot phonons can lead to additional effects in intensity modulation response of quantum well (QW) lasers.7 In this report we present the results of theoretical investigation on influence of carrier heating on frequency chirping in QW lasers, including hot-phonon effect. Simple analytical expressions for the chirp to modulated power ratio (CPR) are derived.
© 1994 Optical Society of America
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