Abstract
One of the major challenges facing the extreme ultraviolet (EUV) projection lithography program is realizing high resolution, diffraction limited imaging. Even though near diffraction-limited images have been obtained with different systems, at λ =14 nm1 and λ =42 nm2, a precise, quantitative characterization of the imaging capabilities of these cameras is still lacking. In this paper, we present a new test done at λ = 139Å that should provide very precise measurement of the aberrations and alignment errors of a multi-layer coated EUV camera.
© 1994 Optical Society of America
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