Abstract
EUV metrology is central to the successful commercialization of EUV projection lithography. Metrology carried out at the EUV wavelength of 13 nm enables a gain of ~50 in precision when translated from visible light wavelengths. It also uniquely measuring wavefront errors due to lateral variations in the inherent phase shift upon reflection from the multilayer coating. We present the development of two metrology techniques: EUV Foucault and Ronchi tests.
© 1994 Optical Society of America
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