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Conferences > IQEC > 1994 > QWC > QWC45
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper QWC45

Thermalization between 2-D and 3-D carriers in lnGaAs/GaAs single-quantum-well structures

S. Marcinkevičius and U. Olin

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Abstract

Thermalization of three-dimensional (3-D) carriers in bulk GaAs and two-dimensional (2-D) carriers in GaAs quantum wells (QWs) has been extensively studied over the past years. However, the problem of carrier thermalization between the 2-D and 3-D carriers has hardly been addressed to date. At high photoexcited carrier densities (6 × 1012 cm−2), a thermalization time of less than 300 fs was found,1 and equal carrier temperatures for the 2-D carriers in the QW and 3-D carriers in the barriers of InGaAs/InP QW structures were observed.

© 1994 Optical Society of America

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