Wavelength Dependent Activation Selectivity In Aluminum Chemical Vapor Deposition

G. S. Higashi; G. E. Blonder; C. G. Fleming

doi:10.1364/MSBA.1987.TuB2

Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates
Technical Digest Series (Optica Publishing Group, 1987),
paper TuB2
•https://doi.org/10.1364/MSBA.1987.TuB2

Wavelength Dependent Activation Selectivity In Aluminum Chemical Vapor Deposition

G. S. Higashi, G. E. Blonder, and C. G. Fleming

Microphysics of Surfaces, Beams, and Adsorbates 1987

Santa Fe, New Mexico United States
16–18 February 1987
ISBN:

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Session 5 (TuB)

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G. S. Higashi, G. E. Blonder, and C. G. Fleming, "Wavelength Dependent Activation Selectivity In Aluminum Chemical Vapor Deposition," in Topical Meeting on Microphysics of Surfaces, Beams and Adsorbates, Technical Digest Series (Optica Publishing Group, 1987), paper TuB2.

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Abstract

Projection patterned laser deposition offers an alternative technique to focussed beam writing in the growth of patterned films for microelectronic applications. Focussed beam writing has the advantage of extreme flexibility because it allows discretionary patterning, while the projection patterned deposition technique offers high throughput for the repetitive processes encountered in mass production.

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