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Oxidation Stacking Faults (OSFs) in Silicon Crystals Detected by Light Scattering Topography

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Abstract

It is well known that particles on a silicon wafer may have a large influence on the yield of high - density devices. Such particles have been reliably detected only by light - scattering methods. Recently, light scattering has been used to attempt to measure the surface roughness of a silicon wafer, but reasonable results have not yet been obtained.

© 1992 Optical Society of America

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