Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Red Laser Diode

Not Accessible

Your library or personal account may give you access


We demonstrated the first orange laser diode at room temperature with a decent total output power of ~46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

© 2015 Optical Society of America

PDF Article
This paper was not presented at the conference

More Like This
Diode-Pumped, CW, Blue, Green, Orange, and Red Upconversion Fiber Lasers Operating at Room Temperature

Ping Xie and T. R. Gosnell
VL11 Advanced Solid State Lasers (ASSL) 1995

DWELL based laser structure grown by LP-MOCVD using InGaP as p-doped cladding layer

Xin Gu, Qi Wang, Xiaomin Ren, Hao Liu, Guoming Mao, Shiwei Cai, Xia Zhang, and Yongqing Huang
ASu3B.2 Asia Communications and Photonics Conference (ACPC) 2015

A Yellow InGaP Light Emitting Diode Epitaxially Grown on Si Substrate

Cong Wang, Bing Wang, Kenneth Eng Kian Lee, Soon Fatt Yoon, and Jurgen Michel
AS3A.3 Asia Communications and Photonics Conference (ACPC) 2015


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved