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Improvement in the modulation bandwidth of MOS optical modulators by using p-SiGe slab

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Abstract

The modulation bandwidth of MOS optical modulators can be improved by low-resistive p-SiGe slab. In conjunction with the enhanced plasma dispersion in SiGe, the bandwidth can be improved by 1.3 times with shorter device length.

© 2015 Optical Society of America

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