Low power consumption 1.3 μm GaInAsP/ InP CRIN-SCH strained-layer MQW lasers

A. Kasukawa; T. Namegaya; N. Iwai; N. Yamanaka

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1994),
paper CWO2

Low power consumption 1.3 μm GaInAsP/ InP CRIN-SCH strained-layer MQW lasers

A. Kasukawa, T. Namegaya, N. Iwai, and N. Yamanaka

Conference on Lasers and Electro-Optics 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-341-X

From the session
Long-Wavelength Laser Diodes (CWO)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
A. Kasukawa, T. Namegaya, N. Iwai, and N. Yamanaka, "Low power consumption 1.3 μm GaInAsP/ InP CRIN-SCH strained-layer MQW lasers," in Conference on Lasers and Electro-Optics, T. Baer, A. Smirl, J. Bowers, and D. Miller, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1994), paper CWO2.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

The low-threshold 1.3 μm lasers with small temperature dependent characteristics are required for subscriber systems. Strained-layer quantum well (SL QW) lasers¹ are the candidate for such applications.

PDF Article

More Like This

High temperature operation 1.3 μm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta
CME1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

Low threshold and low power consumption 1.3pm strained-layer quantum well lasers

A. Kasukawa and N. Yokouchi
18D4.1 Optoelectronics and Communications Conference (OECC) 1996

Temperature Dependence of Emission Wavelength in 1.3 μm GaInAsP/InP GRIN-SCH MQW Laser Diodes Grown by MOCVD

A. Kasukawa, N. Matsumoto, I. J. Murgatroyd, T. Fukushima, S. Kashiwa, and H. Okamoto
PD6 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989

Previous Article Next Article