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Conferences > CLEO > 2003 > CTuH > CTuH2
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CTuH2

Carrier Confinement in 1300-nm InGaAsN Quantum-Well Lasers

Nelson Tansu, Jeng-Ya Yeh, and Luke J. Mawst

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Abstract

Theoretical and experimental analysis of carrier transport in high-performance 1300-nm InGaAsN QW lasers, indicate significant thermionic hole leakage. Experimental optimization of the InGaAsN QW lasers by suppressing the carrier leakage, results in an extremely-low threshold current density of only 440 A/cm2 at temperatures of 90 °C.

© 2003 Optical Society of America

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