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Conferences > CLEO > 2005 > CMF > CMF2
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CMF2

1.55 µm GaInNAsSb lasers on GaAs

S. R. Bank, M. A. Wistey, L.L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris

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Abstract

We present a 1.55 µm laser grown on GaAs by molecular beam epitaxy. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room temperature threshold current density was 2.4 kA/cm2, lasing at 1.553 µm.

© 2005 Optical Society of America

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