Abstract

A long-wavelength surface-emitting (SE) laser is expected to be one of important light sources for future large capacity parallel networks and optical interconnects. In recent years, GaInAsP/InP SE lasers have been much investigated.¹ However, it is important to design the optimum laser structure for further improvements of the laser characteristics. In this study, we have examined the effect of inter-valence band absorption (IVBA) loss at the p-cladding layer on the lasing characteristics of long-wavelength SE lasers. The lateral uniformity of the current injection is also discussed to optimize the p-cladding layer structure.

© 1995 IEEE