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Intensity and Phase Modulators at 1.55 μm with InAs/InGaAs Quantum Dots Epitaxially Grown on Silicon

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Abstract

InAs quantum dot core electro-optic modulators are fabricated on (100) silicon substrates opening up large-scale III-V photonic integration. Mach-Zehnder modulator with 8 mm long electrode has 2.2V Vπ and less than 3 dB/cm propagation loss.

© 2018 The Author(s)

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