Abstract
MQWs with II-VI compound semiconductors such as ZnSe/ZnS, ZnTe/ZnSe, and CdSe/ZnSe are promising materials for optoelectronic devices.1 Because of a large exciton binding energy due to a small exciton Bohr radius of II-VI compound semiconductors,2 the stable exciton peak can be seen at room temperature in II-VI MQWs. These MQWs have the potential to show large optical nonlinearities. Here, we report on the characterization and third-order nonlinear optical properties of ZnCdSe/ZnSSe MQW fabricated by MBE.
© 1994 IEEE
PDF ArticleMore Like This
T. Mitsuyu, S. Hayashi, and Y. Manabe
CThH1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992
J. C. Jans, J. Petruzzello, J. M. Gaines, and D. J. Olego
CWF45 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1994
Eunsoon Oh, M.D. Kim, H.D. Jung, S.D. Lee, B.J. Kim, J.K. Ji, H.S. Park, T.I. Kim, S.V. Ivanov, A.A. Toropov, and T.V. Shubina
18C4.3 Optoelectronics and Communications Conference (OECC) 1996