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Third-order optical nonlinearities in ZnCdSe/ZnSSe multiple quantum well

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Abstract

MQWs with II-VI compound semiconductors such as ZnSe/ZnS, ZnTe/ZnSe, and CdSe/ZnSe are promising materials for optoelectronic devices.1 Because of a large exciton binding energy due to a small exciton Bohr radius of II-VI compound semiconductors,2 the stable exciton peak can be seen at room temperature in II-VI MQWs. These MQWs have the potential to show large optical nonlinearities. Here, we report on the characterization and third-order nonlinear optical properties of ZnCdSe/ZnSSe MQW fabricated by MBE.

© 1994 IEEE

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