Abstract

To investigate the validity of the claim that multiquantum barriers (MQBs) improve the performance of visible laser diodes by virtue of a virtual barrier height increase over the bulk barrier height¹ three types of bulk active region double hetcrostructure Ga_0.5In_0.5P/(Al_0.4Ga_0.6)_0.5In_0.5P laser diodes were designed. The first was used as a reference while the remaining lasers included an optimised and non-optimised MQB structure respectively. The optimised MQB design is intended to produce a virtual barrier height increase of 75mcV while the non-optimised design is expected to be identical to the bulk reference laser The active region of each laser was adjusted to keep the total optical confinement the same for all three structures.²

© 1996 IEEE