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Conferences > CLEO_Europe > 1998 > CTuI > CTuI53

Annealing and degradation effects under intense laser excitation in ZnSe based laser diode structures.

C. Jordan, J. F. Donegan, E. M. McCabe, S. Taniguchi, T. Hino, K. Nakano, and A. Ishibashi

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Abstract

Green laser diodes based on II-VI wide band gap semiconductors are subject to degradation under current injection. Considerable progresses have been made in material quality and a 100 h cw operation was reported by Sony in early 1996.

© 1998 IEEE

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