Variations in Emission Properties of ZnSe Crystals Under High Excitation

S. Colak; R.N. Bhargava; B.J. Fitzpatrick; A. Sicignano

doi:10.1364/ICOL.1984.ThC12

International Conference on Luminescence - 1984
Technical Digest Series (Optica Publishing Group, 1984),
paper ThC12
•https://doi.org/10.1364/ICOL.1984.ThC12

Variations in Emission Properties of ZnSe Crystals Under High Excitation

S. Colak, R.N. Bhargava, B.J. Fitzpatrick, and A. Sicignano

International Conference on Luminescence 1984

Madison, Wisconsin United States
13–17 August 1984
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S. Colak, R. N. Bhargava, B. J. Fitzpatrick, and A. Sicignano, "Variations in Emission Properties of ZnSe Crystals Under High Excitation," in International Conference on Luminescence - 1984, Technical Digest Series (Optica Publishing Group, 1984), paper ThC12.

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Abstract

There has been a resurgence of studies in wide band gap II-VI semiconductors for applications such as electron beam pumped visible lasers.^1,2 For this purpose we have studied the luminescence properties of a variety of ZnSe crystals with various impurities under e-beam excitation densities up to several MW/cm² for temperatures above 100°K.

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