Abstract

Very compact low-threshold in-plane semiconductor lasers, as short as 20 μm long and operating at a wavelength of 980 nm have been realised. These lasers have microstructured mirrors formed at both cavity ends by deep reactive ion etching, with a back mirror formed by a seven-period third-order Bragg reflector having a measured reflectivity of ~95%. The front mirror has a similar configuration, but consists of three periods with a lower reflectivity (~80%) for output coupling. Laser action has been achieved from 20 μm long devices 8 μm wide, which exhibit a current threshold of 7 mA and are among the smallest in-plane emitting electrically pumped lasers demonstrated so far.

© 2000 IEEE