Abstract

We report a successful selective preparation of single-phase boron-rich silicon borides (SiBx) films for thermo-electric energy conversion device by pulsed Nd:YAG laser ablation method. In this process, SiBx films on silicon substrate were produced by a pulse laser ablation method in 10 mtorr argon gas. Nano-meter order silicon particles and boron particles were ablated by Nd:YAG laser pulse. After heating about 1670 K during 10 hour under argon gas, x-ray diffraction patterns and electron probe micro analyzer (EPMA) analysis of this films show single-phase composition. As a result of the laser ablation process under several processing conditions, thin films of SiB4 or SiB6 are selectively presented about three microns thick and about six centimeters square. The influence of process parameters on morphology, phase diagram, electrical conductivity, thermal conductivity and Seebeck coefficient of the films were also discussed.

© 2000 IEEE