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Telecom InAs quantum-dot FP and microdisk lasers epitaxially grown on (111)-faceted SOI

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Abstract

By utilizing homo-epitaxially formed (111)-faceted silicon hollow structures on U- shaped patterned silicon on insulator (SOI) substrates, 1310 nm and 1510 nm InAs quantum dot (QD) fabry-perot and microdisk lasers are achieved on such platform, which paves a promising way to realize silicon-based light source for silicon photonic integration.

© 2020 The Author(s)

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More Like This
1300 nm and 1500 nm InAs/GaAs quantum dot lasers directly grown on SOI substrates for silicon photonics integration

Wenqi Wei, Zihao Wang, Ting Wang, and Jianjun Zhang
T2D.5 Asia Communications and Photonics Conference (ACPC) 2021

O-band P-doped InAs/GaAs quantum dot lasers directly grown on SOI substrate

Jing-Zhi Huang, Wen-Qi wei, Jia-Jian Chen, Zi-Hao Wang, Ting Wang, and Jian-Jun Zhang
W1C.4 Asia Communications and Photonics Conference (ACPC) 2021

InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Wen-Qi Wei, Ting Wang, and Jian-Jun Zhang
M2I.2 Asia Communications and Photonics Conference (ACPC) 2018

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