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Rapid Thermal Annealing of InAlGaAs/GaAs Quantum Dot Lasers for Sub-900 nm Emission

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Abstract

Molecular beam epitaxy-grown InAlGaAs/GaAs quantum dot lasers were grown, fabricated, and characterized for sub-900 emission. Rapid thermal annealing improves the optoelectronic properties of the lasers, leading to small reverse-leakage current and low threshold current density.

© 2023 The Author(s)

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