Ge-implantation-enhanced defect-state absorption in C-band silicon waveguide photodiode monitors

Yue Niu; Andrew W. Poon

doi:10.1364/CLEO_SI.2023.SM4G.4

CLEO 2023
Technical Digest Series (Optica Publishing Group, 2023),
paper SM4G.4
•https://doi.org/10.1364/CLEO_SI.2023.SM4G.4

Ge-implantation-enhanced defect-state absorption in C-band silicon waveguide photodiode monitors

Yue Niu and Andrew W. Poon

CLEO: Science and Innovations 2023

San Jose, CA United States
7–12 May 2023
ISBN: 978-1-957171-25-8

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Light Detection and Mode Manipulation (SM4G)

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Y. Niu and A. W. Poon, "Ge-implantation-enhanced defect-state absorption in C-band silicon waveguide photodiode monitors," in CLEO 2023, Technical Digest Series (Optica Publishing Group, 2023), paper SM4G.4.

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Abstract

We demonstrate Ge-implantation-enhanced defect-state absorption in the C-band in a 225-μm-long silicon waveguide photodiode, with a responsivity of ~54.8 mA/W/mm and a 1 nA dark current upon -3 V bias after a 10-minute 350°C annealing.

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