Abstract

Progress in the miniaturization of electronic devices, the emergence of compound semiconductors in optoelectronics applications, and the development of quantum device structures based on nanostructures can continue only with an improved understanding and control of surfaces and interfacial regions. One important way to achieve such control is by real-time measurements during growth and etching. In addition to the standard surface-analysis techniques that require near ultrahigh vacuum (UHV) conditions (such as XPS, LEED, and EELS), there is a need for noninvasive real-time surface probes with submonolayer sensitivity that will be applicable to either the UHV environment of a molecular beam epitaxy (MBE) chamber or the atmospheric-pressure environment of an organometallic vapor phase epitaxy (OMVPE) reactor. Optical probes can be used during either type of processing.

© 1997 Optical Society of America