Abstract

Chemical and structural ordering in amorphous silicon-carbon alloys was investigated using THEED. Si_xC_1-x films were prepared by magnetron sputtering, some of them were thermally annealed. Value of x was changed in the range 0.4÷0.6. Substrates temperature under the deposition varied from 300 to 633K. There were obtained the parts of C-C, Si-Si, Si-C chemical bonds and the nearest order was estimated. Deposition temperature 633K resulted to microcrystalline stucture (1<1.5nm). Thermal annealing was carried out under the temperatures 773, 1073 and 1273K. It was found that annealed structure of Si_xC_1-x samples strongly depends on the initial chemical order. Initially disordered structures revealed tendency to form cubic packing comparing with chemically ordered ones.