Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P

G. P. Golubev; I. Kh. Kaufman; D. G. Luchinsky; E. A. Zhukov

European Quantum Electronics Conference
Technical Digest Series (Optica Publishing Group, 1994),
paper QWD64

Disorder effects on the optical properties and luminescence decay time of p-In_0.5Ga_0.5P

G. P. Golubev, I. Kh. Kaufman, D. G. Luchinsky, and E. A. Zhukov

European Quantum Electronics Conference 1994

Amsterdam Netherlands
28 August–2 September 1994
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Poster Session 2 (QWD)

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G. P. Golubev, I. K. Kaufman, D. G. Luchinsky, and E. A. Zhukov, "Disorder effects on the optical properties and luminescence decay time of p-In0.5Ga0.5P," in European Quantum Electronics Conference, Technical Digest Series (Optica Publishing Group, 1994), paper QWD64.

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Abstract

The ternary alloy Ga_0.5In_0.5P (GaInP) is a perspective material for the development of semiconductor lasers and laser diodes as a direct gap semiconductor lattice matched to GaAs. It has two modifications with large (~1.92 eV) and small (~1.82 eV) band gaps. The latter modification related to the spontaneous ordering of the cations of the group-III and has substantially different optical properties in comparison with large-band-gap modification.¹

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