Abstract

Vertical cavity semiconductor laser (VCSEL) have a lol of advantages such as a well-shaped beam and a low threshold current what make them good candidates for telecommunications and engineering applications. Many works were dedicated up to now to the study of steady performances of such a laser structure [1] but a few to their dynamics and noise[2]. In particular the experimental and theoretical investigation of their quantum noise including squeezing is under discussion. Experimental works have shown that such lasers have a lower R.I.N than edge emitting semiconductor laser under comparable conditions [3]. Quantum mechanically based models have been only used to study amplitude noise squeezing [4] with VCSELs. In this work, a semiclassical description is used for the first time for this problem and the influence of structural parameters is discussed.

© 1996 IEEE