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Conferences > EQEC > 1996 > QThN > QThN5
  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper QThN5

Rabi Splitting in a Microcavity Grown on a (311)a GaAs Substrate

F. M. Matinaga, L.A. Cury, E.C. Valadarcs, M. V. B. Moreira, W.N. Rodrigues, A. G. de Oliveira, J. M.C. Vilela, M.S. Andrade, and J.A. Sluss

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Abstract

Rabi splitting in a microcavity grown on a (311)A GaAs substrate was observed for the first time using photoluminescence (PL). This splitting is 1.4 times larger than that observed in a similar structure grown on a (100) GaAs substrate1, in agreement with the expected three times larger binding energy of excitons confined in higher index quantum wells2. Our microcavity structure was grown by MBE and its good morphological quality was verified by atomic force microscopy (AFM). The one wavelength cavity consists of two AlAs/Al0.15Ga0.85As DBR mirrors, and the active region is formed by three GaAs 100Å quantum wells sandwiched by two Al0.3Ga0.7As spacer layers.

© 1996 IEEE

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