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Conferences > EUL > 1994 > EOS > EOS.83

Experiments and Simulations of EUV Lithographic Resist Patterning at Wavelengths from 7 to 40 nm

O. R. Wood, J. E. Bjorkholm, K. F. Dreyer, L. Fetter, M. D. Himel, R. R. Freeman, D. M. Tennant, J. E. Griffith, G. N. Taylor, W. K. Waskiewicz, D. L. White, D. L. Windt, A.A. MacDowell, B. La Fontaine, B. M. Lum, A. R., Neureuther, J. B. Kortright, E. M. Gullikson, and K. B. Nguyen

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Abstract

Both experiment and simulation of EUV lithographic resist patterning show that high resist absorption in the 7 to 40 nm wavelength region leads to unsatisfactory sidewall profiles in single-layer resists except at the shortest wavelengths.

© 1994 Optical Society of America

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