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Basic Technologies for Extreme Ultraviolet Lithography

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Abstract

Research activities on the development of basic technologies for EUVL at Nikon, which include debris elimination of a laser plasma x-ray source, 3-mirror ring-field projection optics design, ring-field Köhler-critical illumination system design, asphere fabrication by partially corrective polishing, and electroplated reflection masks, are described.

© 1996 Optical Society of America

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