Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Optical Technology for EUV Lithography

Not Accessible

Your library or personal account may give you access


A high-throughput optical system that has a bouncing number of only four, including a reflective mask, was designed. The illumination system is comprised of a single tilted-ellipsoidal mirror, that is suitable for a two-aspherical-mirror ring-field imaging system. A prototype optical system was evaluated using synchrotron radiation at the Photon Factory. The experimental results combined with calculations have indicated that a throughput of 15 to 20 wafers/h can be obtained by using the optical system in combination with a compact storage ring. In addition, 0.12-μm line-and-space patterns were delineated in parts of the ring field. The use of alternating and attenuated reflective phase-shifting masks is also discussed to enhance the resolution of EUV lithography.

© 1996 Optical Society of America

PDF Article
More Like This
Surface characterization of optics for EUV lithography

D. P. Gaines, D.W. Sweeney, K.W. DeLong, S.P. Vernon, S.L. Baker, D. A. Tichenor, and R. Kestner
OF103 Extreme Ultraviolet Lithography (EUL) 1996

Optical System for EUV Lithography

John S. Taylor
OWA7 Optical Fabrication and Testing (OF&T) 2000

Basic Technologies for Extreme Ultraviolet Lithography

Katsuhiko Murakami, Tetsuya Oshino, Sumito Shimizu, Wakana Wasa, Hiroyuki Kondo, Masayuki Ohtani, Noriaki Kandaka, Kiyoto Mashima, and Kazushi Nomura
EWW16 Extreme Ultraviolet Lithography (EUL) 1996

Select as filters

Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.