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Two-photon Absorption of GaN and AlxGa1-xN Thin Films

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Abstract

Nonlinear absorption of GaN and AlxGa1-xN thin films were studied by the Z-scan technique in the range of 0.53~0.63 Ephoton/Eg, with values ranging from 0.8 to 2.2 cm/GW depending of sample composition, indicating its influences on the nonlinearity.

© 2019 The Author(s)

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