Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Two-photon Absorption of GaN and AlxGa1-xN Thin Films

Not Accessible

Your library or personal account may give you access


Nonlinear absorption of GaN and AlxGa1-xN thin films were studied by the Z-scan technique in the range of 0.53~0.63 Ephoton/Eg, with values ranging from 0.8 to 2.2 cm/GW depending of sample composition, indicating its influences on the nonlinearity.

© 2019 The Author(s)

PDF Article
This paper was not presented at the conference

More Like This
Comparative study of stimulated emission in GaN, AlxGa1−xN, and InxGa1−xN

D. Wiesmann, I. Brener, and M. A. Khan
CThP2 Conference on Lasers and Electro-Optics (CLEO) 1996

Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1−xN ultraviolet photodetector

T. Li, J.C. Carrano, C.J. Eiting, P.A. Grudowski, D.J.H. Lambert, H.K. Kwon, R.D. Dupuis, J.C. Campbell, and R.T. Tober
CME6 Conference on Lasers and Electro-Optics (CLEO) 1999

Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD

Shuchang Wang, Xiong Zhang, Hongquan Yang, and Yiping Cui
DW2C.2 Solid-State and Organic Lighting (SOLED) 2014


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved