Abstract

The samples studied are non-intentional doped and iron-doped high-purity GaAs liquid phase epitaxial layers irradiated with 2 MeV-electrons at room temperature. After annealing at 550 °C a new line appears at 1.5015 eV. The spectral position does not shift with the excitation intensity. We observe a fast decrease of the integrated luminescence intensity with increasing sample temperature. This points out to a particle (electron) loosely bound to the complex. No change in the energy position is observed in this temperature range.

© 1984 Optical Society of America