Abstract

Ion implantation has gained much attention recently as a fabrication technique for GaAs optoelectronic devices. Hunsperger et al¹ produced p-type layers in GaAs by implanting Be at an energy of 40 keV. More recent investigations have reported on the electrical properties of GaAs implanted with Be at energies up to 400 keV.^2-4 Planar p-n junctions were fabricated with low leakage currents and abrupt breakdown characteristics.⁵ No information has yet been reported on Be implantation in GaAlAs.

© 1980 Optical Society of America