Abstract
The InGaAsP/InP and AlGaAsSb/GaSb lattice matched alloy systems are being widely studied in many laboratories for applications in 1.3 to 1.55 μm wavelength optical fiber systems.1 The general detector requirements of high quantum efficiency, fast response, and low noise translate into the material requirements of appropriate bandgap, high purity, low dark current and, for avalanche photodiodes, a large asymmetry in the electron and hole impact ionization coefficients.
© 1982 Optical Society of America
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